By H. Adam
1965 Transactions of the 3rd foreign Vacuum Congress, quantity 2, half I files the lawsuits at the 3rd foreign Vacuum Congress held in Stuttgart, Germany on June 28-July 2, 1965.
This compilation is split into 4 periods. consultation 1 makes a speciality of evaporation and skinny motion pictures, whereas consultation 2 bargains with the move of gases. The parts and fabrics of orthodox vacuum pumps are lined in consultation three. The final consultation concentrates on strain size and leak detection.
The subject matters mentioned comprise advancements within the vacuum deposition of digital movie circuits; bulk sublimation of titanium; transmission chance choice with directed mass movement and with suggest unfastened direction concerns; measuring the density and course of gasoline molecular movement utilizing an ionization detector; and porous steel isolation traps and cryosorbents in vacuum process. the standards influencing the functionality and layout of water-cooled condensers; electrode dimensions of the Bayard-Alpert ionization gauge and its sensitivity; and research of the alterations in Pirani gauge features also are deliberated during this textual content.
This quantity is helpful to scholars and researchers undertaking paintings on vacuum, together with different comparable topics corresponding to etymology, electromagnetism, and quantum mechanics.
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Additional info for 1965 Transactions of the Third International Vacuum Congress. Sessions 1–4
Die Berechnung der Verunrelnigung von Gold-und Nickelaufdampfschichten durch Vakuum-Restgase aus gaskinetischen Gesetzen mit dem Haftkoeffizienten 1 ergibt im untersuchten Druckbereich erheblich grõssere Gaskonzentrationen ais das Experiment. Gold and nickel films in thicknesses ranging from 600 Â to 10,000 Â are evaporated at different pressures in an ultra-high vacuum apparatus, after admission of different gases. Measurements of residual resistivity on the films show that as the pressure rises in the vacuum vessel, foreign substances become increasingly entrapped in the samples.
Figure 12. Frequency characteristics of capacitance and dissipation factor. Figure 10. Dissipation factor versus evaporation temperature. Figure 10 shows that the higher the source temperatures maintain, the smaller the Q value becomes. It shows that when source temperatures were held constant, Q values depend on the deposition rate. The infrared characteristics were independent of the deposition conditions ranging from 1075 °C to 1225 °C except 1275 °C. When the source temperatures rise above 1275 °C, the proper transmittance peaks do not always appear, in other words, 1275 °C is the critical temperature for the formation of the disilicon trioxide.
This enabled us to study the effects of oxidation on the deposited films. For the investigations of the partial pressure of residual gas the reaction mechanism between the substances in the evaporation source, the resi50 dual gas analyser, Consolidated Electrodynamics Cop type 21-613, has been provided. Figurei. Schematic diagram of evaporation source. 1, mixture; 2, molybdenum container; 3, carbon crucible; 4, tantalum heater; 5, thermocouple well. 1 mm thick winding the carbon crucible. 5-3 g mixtures of silicon, silicon dioxide and zirconium oxide or hafnium oxide or tantalum oxide.